3D Electro-optical Simulations for Improving the Photon Detection Probability of SPAD Implemented in FD-SOI CMOS Technology - HAL Accéder directement au contenu
Communication dans un congrès Année : 2021

3D Electro-optical Simulations for Improving the Photon Detection Probability of SPAD Implemented in FD-SOI CMOS Technology

Résumé

In this article, a 3D electro-optical simulation method is presented in order to estimate the Photon Detection Probability (PDP) of Single-Photon Avalanche Diodes (SPAD). The efficiency of the proposed simulation flow is demonstrated through a complete study aimed at improving the PDP of a SPAD implemented in 28nm Fully Depleted Silicon-On-Insulator (FD-SOI) CMOS technology using a light-trapping approach (thanks to the patterning of Shallow Trench Insolation-STI layer). Simulation shows an increase of PDP spectrum of over 50% at wavelengths of 400-550nm and 750-1000nm and of 10-15% at the wavelengths of 550-750nm, compared to a reference SPAD without any nanostructuration.
Fichier principal
Vignette du fichier
2021 3D Electro-optical Simulations for Improving the Photon Detection Probability of SPAD Implemented in FD-SOI CMOS Technology_SISPAD_2021_V2_mOR.pdf ( 796.02 Ko ) Télécharger
Origine : Fichiers produits par l'(les) auteur(s)
Loading...

Dates et versions

halshs-03515486, version 1 (06-01-2022)

Identifiants

Citer

S. Gao, D. Issartel, R. Orobtchouk, F. Mandorlo, D. Golanski, et al.. 3D Electro-optical Simulations for Improving the Photon Detection Probability of SPAD Implemented in FD-SOI CMOS Technology. 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2021, Dallas, United States. pp.301-304, ⟨10.1109/SISPAD54002.2021.9592555⟩. ⟨halshs-03515486⟩
42 Consultations
201 Téléchargements
Dernière date de mise à jour le 12/05/2024
comment ces indicateurs sont-ils produits

Altmetric

Partager

Gmail Facebook Twitter LinkedIn Plus